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Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process

机译:使用一步法生长的Bi2Te3单晶纳米结构的热导和电导

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摘要

Single-crystal Bi2Te3 nanowires (NWs) and nanoribbons (NRs) were synthesized by a vapor-liquid-solid (VLS) method from Bi2Te3 powder. To investigate the thermal properties of the Bi2Te3 nanostructure, a nondestructive technique based on temperature dependent Raman mapping was carried out. The Raman peaks were red shifted with increasing temperature. In addition, the fraction of the laser power absorbed inside the Bi2Te3 nanostructures was estimated by optical simulation and used to calculate the thermal conductivity value (κ). The thermal conductivity value obtained for the Bi2Te3 NW and NR was 1.47 Wm−1K−1 and 1.81 Wm−1K−1 at 300 K, respectively. The electrical conductivity of the Bi2Te3 nanostructure was also measured. In particular, an excellent electrical conductivity value of 1.22 * 103 −1 cm−1 was obtained for the Bi2Te3 NW at 300 K. This result can be attributed to topological insulator surface states. As a result of our study, the figure of merit (ZT) for the Bi2Te3 NW and NR can be significantly improved.
机译:采用汽液固(VLS)法由Bi2Te3粉末合成了Bi2Te3单晶纳米线(NWs)和纳米带(NRs)。为了研究Bi 2 Te 3纳米结构的热性质,进行了基于温度依赖性拉曼作图的无损技术。拉曼峰随温度升高而红移。此外,通过光学模拟估算了Bi2Te3纳米结构内部吸收的激光功率的比例,并将其用于计算热导率值(κ)。 Bi2Te3 NW和NR的热导率值为1.47 Wm -1 K -1 和1.81 Wm -1 K - 1 分别为300 K还测量了Bi 2 Te 3纳米结构的电导率。特别地,对于Bi 2 Te 3 NW在300 K下获得了优异的电导率值1.22> * 10 3 Ω -1 cm -1 。该结果可以归因于拓扑绝缘体的表面状态。作为我们研究的结果,Bi2Te3 NW和NR的品质因数(ZT)可以得到显着改善。

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