A method and arrangement for the thermal treatment of a single-crystal valley between lini lamina, single-crystal valley lini ches platelets and a process for the preparation of a single-crystal valley between platelet lini

摘要

A method for heat-treating a single-crystal silicon wafer by which the number of single-crystal silicon wafers treated in a single heat-treating process is increased and, at the same time, dislocation and slip in a high-temperature heat-treating atmosphere are suppressed at the time of performing various kinds of heat treatment, such as a diffusion heat treatment for forming a DZ layer, a treatment for generating and controlling BMD for giving the IG ability, a heat treatment for improving the withstand voltage of an oxide film by eliminating COP defects on and in the wafers. The wafers are divided into groups of about 10 wafers, the wafers of each group are stacked, and a plurality of groups of wafers are placed horizontally or in a state that the wafers are inclined slightly by an angle of 0.5-5° on a boat which supports the wafers at a plurality of points on the outer peripheries of the wafers. Therefore, as shown in embodiments, various kinds of heat treatment can be applied to the wafers and the wafers are heat-treated uniformly, because dislocation and slip of the wafers are prevented.