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Weak Antilocalization Effect and Noncentrosymmetric Superconductivity in a Topologically Nontrivial Semimetal LuPdBi

机译:拓扑非平凡的半金属LuPdBi中的弱反局部化效应和非中心对称超导性

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摘要

A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties. However, no transport measurements associated with the topological surface states have been observed in these half-Heusler candidates due to the dominating contribution from bulk electrical conductance. Here we show that, by reducing the mobility of bulk carriers, a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hallmarks of topological surface states, was experimentally revealed from the tilted magnetic field dependence of magnetoconductance in a topologically nontrivial semimetal LuPdBi. Besides the observation of a 2D WAL effect, a superconducting transition was revealed at Tc ~ 1.7 K in the same bulk LuPdBi. Quantitative analysis within the framework of a generalized BCS theory leads to the conclusion that the noncentrosymmetric superconductivity of LuPdBi is fully gapped with a possibly unconventional pairing character. The co-existence of superconductivity and the transport signature of topological surface states in the same bulk alloy suggests that LuPdBi represents a very promising candidate as a topological superconductor.
机译:最近,已提出大量的半霍斯勒化合物作为具有可调物理特性的三维(3D)拓扑绝缘体(TI)。然而,由于体积电导的主要贡献,在这些半霍斯勒候选物中未观察到与拓扑表面状态相关的传输测量。在这里,我们表明,通过降低大体积载流子的迁移率,从拓扑学上磁导的倾斜磁场依赖性实验揭示了二维(2D)弱反局部化(WAL)效应,这是拓扑表面状态的标志之一。非平凡的半金属LuPdBi。除了观察到2D WAL效应外,在相同体积的LuPdBi中,在Tc〜1.7 K处发现了超导转变。在广义BCS理论框架内的定量分析得出了这样的结论,即LuPdBi的非中心对称超导性完全具有可能的非常规配对特性。在同一块体合金中,超导性与拓扑表面态的迁移特征共存表明,LuPdBi代表了作为拓扑超导体的非常有前途的候选者。

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