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首页> 外文期刊>Scientific reports. >Shubnikov - de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi
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Shubnikov - de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi

机译:推定拓扑超导体LuPdBi中的Shubnikov-de Haas振荡,反局部化作用弱和线性磁阻大

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We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature T c = 1.8?K, with a zero-temperature upper critical field B c2 ≈ 2.3?T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5?T, the magnetoresistance becomes linear and does not saturate in fields up to 9?T. The linear magnetoresistance is observed up to room temperature. Below 10?K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of 0.06 me and a Berry phase very close to π , expected for Dirac-fermion surface states, thus corroborating topological nature of the material.
机译:我们介绍了半金属半赫斯勒相LuPdBi单晶的电子输运和磁性,具有理论预测的非平凡拓扑性质所必需的能带反转。该化合物在临界温度T c = 1.8?K以下具有超导性,零温度上临界场B c2 ≈2.3?T。尽管超导状态清楚地反映在电阻率和磁化率数据中,但是在比热中看不到相应的异常。电阻率的温度依赖性表明存在两个平行的导电通道:金属和半导体,而在低温下,后者的贡献可忽略不计。磁阻很大,在小磁场中显然显示出较弱的抗局部化作用。高于1.5?T时,磁阻变为线性,并且在高达9?T的磁场中不会饱和。在室温下观察到线性磁阻。低于10?K,则伴随着Shubnikov-de Haas振荡。他们的分析表明,电荷载流子的有效质量为0.06 m ,贝里相非常接近π,这是狄拉克费米子表面态所期望的,因此证实了材料的拓扑性质。

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