AIR-STABLE PASSIVATION OF TOPOLOGICAL DIRAC SEMIMETALS

摘要

Described herein is a structure including: means for generating an electric field; a topological Dirac semimetal layer, wherein the topological Dirac semimetal layer is non- conductively separated from the means for generating the electric field, and the means for generating the electric field is configured to apply the electric field to at least a portion of the topological Dirac semimetal layer; and an oxygen barrier layer for preventing oxidation of the topological Dirac semimetal layer, the oxygen barrier layer formed of a material of the form MF2, wherein M is an alkaline earth metal. Also described herein is a structure for altering the charge carrier density in a topological Dirac semimetal, the structure comprising: a conductor; an insulating layer; a topological Dirac semimetal layer separated from the conductor by at least the insulating layer; an oxygen barrier layer for preventing oxidation of the topological Dirac semimetal layer, the oxygen barrier layer formed from a material of the form MF2, wherein M is an alkaline earth metal; and at least one electrode contacting the topological Dirac semimetal layer; wherein the conductor and the at least one electrode are configured to apply an electric field to at least a portion of the topological Dirac semimetal layer to alter the charge carrier density of the topological Dirac semimetal layer. Further described here is a structure for altering the band gap of a topological Dirac semimetal, the structure comprising: a conductor; an insulating layer; a topological Dirac semimetal layer separated from the conductor by at least the insulating layer; and an oxygen barrier layer for preventing oxidation of the topological Dirac semimetal layer, the oxygen barrier layer formed from a material of the form MF2, wherein M is an alkaline earth metal; wherein the conductor is configured to apply an electric field to at least a portion of the topological Dirac semimetal layer to alter the band gap of the topological Dirac semimetal layer. Still further described herein are related methods of forming a topological Dirac semimetal layer on a substrate.