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Synthesis and characterization of 3D topological insulators: a case TlBi(S1−xSex)2

机译:3D拓扑绝缘体的合成与表征:案例TlBi(S1-xSex)2

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摘要

In this article, practical methods for synthesizing Tl-based ternary III-V-VI2 chalcogenide TlBi(SSex)2 are described in detail, along with characterization by x-ray diffraction and charge transport properties. The TlBi(SSex)2 system is interesting because it shows a topological phase transition, where a topologically nontrivial phase changes to a trivial phase without changing the crystal structure qualitatively. In addition, Dirac semimetals whose bulk band structure shows a Dirac-like dispersion are considered to exist near the topological phase transition. The technique shown here is also generally applicable for other chalcogenide topological insulators, and will be useful for studying topological insulators and related materials.
机译:在本文中,详细介绍了合成基于T1的三元III-V-VI2硫族化物TlBi(SSex)2的实用方法,以及通过X射线衍射和电荷传输特性进行表征的方法。 TlBi(SSex)2系统很有趣,因为它显示了拓扑相变,其中拓扑非平凡的相变为平凡的相而没有定性地改变晶体结构。另外,认为其体带结构显示出狄拉克样分散的狄拉克半金属存在于拓扑相变附近。此处显示的技术通常还适用于其他硫族化物拓扑绝缘体,并且对研究拓扑绝缘体和相关材料很有用。

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