One of the types of negative tone photoresists is composed of at least a catalyst, a solvent, and epoxy resin. This is the primary raw material for lithography technology. To ensure high-quality pattern transfer in the lithography process, it is crucial to control the properties of the photoresist. In this work, a set of resins based on Bisphenol-A were synthesized. The obtained resins have been characterized regarding the chain size and its derivative products. As a second step, an epoxidation reaction was performed and the epoxy groups were quantified. The profile of the resins, obtained by mass spectroscopy (ESI-µ-TOF-MS), showed that it is possible to tune the chain sizes of the polymers and their derivate by controlling the parameters of the polymerization reaction. Three profiles of resins were achieved in this study. Nuclear magnetic resonance (NMR) indicates an epoxidation in the range of 96%, when comparing the phenolic peak intensity before and after the reaction. Differential Scan Calorimetry (DSC) measurements confirmed the different oligomer profiles of resins, showing different glass transition temperatures.
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