KOH湿法腐蚀中防金属腐蚀工艺研究

摘要

介绍了一种采用PROTEK材料作为保护层,在MEMS器件体硅湿法腐蚀加工工艺中保护金属电极的新工艺.采用这种新的工艺可以在MEMS体硅工艺传感器的加工过程中,完成所有IC工艺的加工后再进行MEMS体硅工艺的加工.实验结果表明:采用这种新的材料进行KOH腐蚀工艺的金属表面保护,既可以提高工艺加工效率,又可以提高工艺加工质量.该工艺可以广泛应用于MEMS体硅工艺中KOH湿法腐蚀的工艺加工,也可以应用于光电子器件的工艺加工.%A new method,which uses PROTEK material in MEMS wet etching process of silicon bulk technology to protect the metal,is introduced. All the IC processes can be done before the wet etching is executed when this new method is employed. The experimental results prove that the new method and the new process can protect the metal very well in wet etching process of the silicon bulk technology. This process can be used widely in KOH wet tching process of the silicon bulk technology and it can also be used in manufacture of photoelectronic devices.