HEMT器件力电耦合传感特性测试

摘要

设计了在Si微结构与AlGaN/GaN高电子迁移率晶体管(HEMT)集成的微机电系统(MEMS).通过微机械加工工艺,完成了力电耦合传感结构的加工.通过实验测试发现HEMT器件具备很强的力电耦合特性,测试结果在-1.5V栅压下,HEMT器件对应力的灵敏度为123.96 MPa/mA,线性度为6.95％.%A MEMS integrates Si micro-structure with AIGaN/GaN high-eleclron-mobility transistor (HEMT) devices is designed. Fabrication of the electromechanical coupling sensitive structure is achieved. The experimental test indicates that the AIGaN/GaN HEMT device has strong electromechanical coupling effect. When grid voltage is -1.5 V,the value of sensitivity is up to 123.96MPa/mA and the value of linearity is 6.95%.