GaAs基HEMT嵌入式微加速度传感器力电耦合系数研究

摘要

A kind of high electron mobility transistor(HEMT) embedded micro-acceleration transducer structure GaAs-based is designed and manufactured. By simulation and experiments, electro-mechanical characteristics of HEMT sensitive unit is studied under action of different acceleration parallel to the HEMT growth direction (Z direction). The experimental results show that the sensitive unit HEMT electro-mechanical coupling coefficient is stable in the low range(0 ~ 15 ga ) of GaAs-based HEMT micro-acceleration transducer, which is 10 -8 and two orders higher than electro-mechanical coupling coefficient 10-10 of conventional Si piezoresistive acceleration transducer%设计加工了一种GaAs基高电子迁移率晶体管(HEMT)嵌入式微加速度传感器结构,通过软件仿真和实验测试相结合的方法,研究了所设计的微结构在平行于HEMT生长方向上(Z方向)不同加速度作用下敏感单元HEMT的力电耦合特性.实验结果表明:GaAs基HEMT微加速度传感器在其低量程范围内(0～15gn)敏感单元HEMT的力电耦合系数较稳定,且其力电耦合系数为10-8数量级,比常规Si压阻式加速度传感器的力电耦合系数10-10高出2个数量级.