KOH处理对ZnO纳米棒阵列结构及光电性能的影响

摘要

采用简单的化学沉积结合KOH碱刻蚀的方法,在导电玻璃(FTO)上生长ZnO纳米棒阵列(ZnO NRs).用x射线衍射(xRD)、扫描电子显微镜(SEM)、电流—电压(Ⅰ-Ⅴ)曲线对所得样品的晶型、形貌及光电性能进行测试,结果表明:ZnO NRs呈纤铅矿型；ZnO NRs的形貌及光电性能与KOH的浓度及刻蚀时间密切相关,经0.1 mol/LKOH刻蚀1h后可得到排列高度有序且分布均匀的ZnO NRs；KOH刻蚀后的ZnO NRs与未刻蚀前高密度的ZnONRs相比,其光学性能得到提高.0.1 mol/L KOH刻蚀1h的ZnO NRs作为太阳能电池的光阳极,其光电转换效率、短路电流、开路电压较未刻蚀的ZnO NRs分别提高了0.71％、2.79 mA和0.03 V.%ZnO nanorod arrays (NRs) were synthesized on the fluorine-doped SnO2 transparent conductive glass (FTO) by a simple chemical bath deposition (CBD) method combined with alkali-etched method in potassium hydroxide (KOH) solution.X-ray diffraction (XRD),scanning electron microscopy (SEM) and current-voltage (Ⅰ-Ⅴ) curve were used to characterize the structure,morphologies and optoelectronic properties.The results demonstrated that ZnO NRs had wurtzite structures,the morphologies and photovoltaic properties of ZnO NRs were closely related to the concentration of KOH and etching time,well-aligned and uniformly distributed ZnO NRs were obtained after etching with 0.1 mol/L KOH for 1 h.ZnO NRs treated by KOH had been proved to have superior photovoltaic properties compared with high density ZnO NRs.When using ZnO NRs etched with 0.1 mol/L KOH for 1 h as the anode of solar cell,the conversion efficiency,short circuit current and open circuit voltage,compared with the unetched ZnO NRs,increased by 0.71％,2.79 mA and 0.03 V,respectively.