蒿2DEG电子迁移率的GaAs基GaAsPHEMT材料的制备

摘要

the GaAs PHEMT epitaxial material were designed and fabricated by optimized MBE technology. The factors that affect μn and ns were studied using contactless Hall and Hall. GaAs PHEMT epitaxial material with μn×ns of 2.52×1016/V＇s was obtained.%设计并采用优化的MBE工艺制备了GaAsPHEMT结构材料，运用非接触霍尔、霍尔等测试方法研究了影响p。和ns的主要因素，优化了OaAs基GaAsPHEMT材料结构，使其u。×n。达到了2．52×10＾18／v·S。