激光全掺杂制备太阳电池发射极的研究

摘要

532 nm laser pulse was applied for full area doping solar cell emitters on n-type monocrystalline silicon substrate with boron precursor layer,sheet resistance of 30 Ω/□ was obtained and effected lifetime improved significantly after annealing.Solar cell's open circuit voltage Uoc reached 597 mV with a conversion efficiency of 13.58％.Demonstrating laser doping is an effective method of preparation of solar cell emitters.%采用波长532 nm的激光脉冲在n型单晶硅衬底上扫描预置的硼源,进行太阳电池发射极制备的研究.通过全激光掺杂获得方块电阻最低为30 Ω/□的发射极,经过退火后少子寿命大幅度提升;在此基础上,初步制备的太阳电池的开路电压Uoc达到597 mV,转换效率为13.58％.研究表明,激光全掺杂是制备太阳电池发射极的有效方法.