METHOD FOR MANUFACTURING PV CELLS WITH SELECTIVE EMITTER / BSF BY LASER ANNEAL AND DESORPTION OF IMPLANTED DOPANTS

摘要

Realization of a semiconductor structure for a solar cell with N and N ++ doped regions comprising: - implanting Phosphorus in a surface area of a semiconductor substrate (1), - performing a thermal annealing of localized recrystallization of first regions (13a, 13b, 13c) of the surface area using a laser while portions (11b, 11c) of the surface area are not exposed to the laser, then store the substrate (1) under a controlled atmosphere during a predetermined waiting time greater than 1 hour and advantageously equal to or greater than 24 hours, then, - carry out an activation annealing of the dopants of the first regions (13a, 13b, 13c) and of said portions by heat treatment of the set of first regions and said portions (11b, 11c). Figure for the abstract: Figure 1D.