一种新型IGBT多阶段驱动电路

摘要

绝缘栅双极型晶体管(IGBT)在各种中大功率电力电子装置中得到广泛应用,但IGBT在开关瞬态产生的电压电流过冲,不但会增加电路电磁干扰(EMI),甚至会损坏器件.所以在设计IGBT驱动电路时就需要考虑减小IGBT在开关瞬态中的电压电流过冲.提出了一种新型的IGBT驱动电路,可减小IGBT的电压电流过冲,相比于传统的方法,可缩短开关时间,降低开关损耗.%The insulated gate bipolar transistor (IGBT) are widely used in many medium to high power conversion system,but the high voltage and current overshot of IGBT during switching transient will cause high electromagnetic interference(EMI) noise and destroy IGBT.This paper presents a new multi-stage IGBT driving method,comparing to the conventional IGBT gate driving method,this method can reduce the switching time and the switching loss.