4H-SiC肖特基二极管α探测器研究

摘要

Silicon carbide (SiC) is a wide bandgap semiconductor material with excellent properties and an excellent medium for detectors. The resolution and relative rise - time of 3 mm × 3 mm 4H - SiC Schottky - diode are investigated with 5.486 MeV 241Am alpha - source. In the vacuum chamber,excellent signals from the SiC detector are observed exposing to alpha particles from 241Am source. The resolution of SiC detector for 5. 486 MeV alpha - particles is 3.4%. As the biased voltages increase, pulse height and relative rise - time from preamplifier FH1047 observed by oscilloscope are saturated to 35. 39 0.21mV and 137. 87 9.44ns, respectively. Well responded signals of SiC detector to alpha particles are observed, indicating that SiC can be used for alpha detection. Combining good resistance to radiation and high temperature, a kind of novel alpha detector and neutron detector with high resolution, fast rise times and high radiation resistance based on SiC Schottky - diode can be developed.%碳化硅(SiC)是一种具有优良物理性能的宽禁带半导体材料,可作为探测器的优良探测介质.用241Am源5.486 MeV的α粒子研究4H-SiC肖特基二极管α探测器的能量分辨率和信号相对上升时间等特性.在真空室中,使SiC探测器暴露在α粒子下,SiC探测器输出良好的响应信号.SiC二极管对5.486 MeVo粒子的能量分辨率最佳可达3.4％；经前置放大器FH1047输出和示波器观测,脉冲幅度随偏压增加而稳定在(35.39±0.21)mV;脉冲上升时间随偏压增加而稳定在(137.87 ±9.44) ns.4H-SiC肖特基二极管对α粒子响应良好,可用于α粒子强度测量.结合SiC耐辐照、耐高温等特性,进一步改进后有望制成分辨率更高、上升时间更快、耐辐照的新型α探测器和中子探测器.