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机译:高温下基于4H-SiC肖特基二极管的探测器的剂量率线性
Faculty of Health Sciences, Kampus Gong Badak, Universiti Sultan Zainal Abidin, Kuala Terengganu, Malaysia;
School of Electrical and Electronic Engineering, Newcastle University, Newcastle Upon Tyne, U.K.;
School of Electrical and Electronic Engineering, Newcastle University, Newcastle Upon Tyne, U.K.;
Detectors; Silicon carbide; Schottky diodes; Radiation detectors; Temperature measurement; Temperature; Sensitivity;
机译:基于4H-SiC肖特基二极管的极限温度传感器的高温操作极限评估
机译:高温下具有界面层的Pt / 4H-SiC肖特基二极管的性能
机译:p-n 4H-SiC薄膜核辐射探测器在高温(375摄氏度)下运行的性能
机译:低剂量率和升高温度照射的辐射比较,揭示双极线性电路中的ELDR
机译:高温高温率和高应变率商业纯度多晶镁的动态行为
机译:Ni / 4H-SiC肖特基二极管辐射探测器的制造与表征其敏感面积高达4 cm2
机译:在高温下基于4H-SiC肖特基二极管的探测器剂量率线性