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还原热处理对石墨烯薄膜导电性的影响

             

摘要

Graphene oxide films were prepared by the modified Hummers method, which includes sonication, aggregation and self-assembly. The graphene films were obtained by vacuum heat treatment of the graphene oxide films. XRD, SEM, FTIR and Raman spectroscopy were used to investigate the microstructure evolution of the films during preparation. It is found that self-assembly is a simple method to produce graphene oxide films with controllable size and perfect stacks of graphene oxide layers. Heat treatment gives the graphene films high electrical conductivities. The electrical conductivity of the films increases up to 536 S/cm with increasing heat treatment temperature under vacuum.%用改进的Hummers法制备了氧化石墨,通过超声、沉聚和自组装等工序制得氧化石墨烯薄膜,真空热处理后获得石墨烯薄膜.利用X射线晶体衍射(XRD)、扫描电子显微镜(SEM)、傅里叶变换红外(FT-IR)和拉曼(Raman)光谱等研究了石墨烯薄膜制备过程中各阶段产物的微观特征变化.结果表明,自组装方法制备氧化石墨烯薄膜简单易行,厚度尺寸可控,微观层状结构良好.热处理使石墨烯薄膜具有导电性,随温度升高导电率不断提高,在1 100℃时可达到536 S/cm.

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