温度对IGBT器件功耗的影响研究

摘要

IGBT是一种综合MOSFET和GTR两种器件优点的功率器件,被广泛应用于电力电子领域.在对这种电力电子器件的研究中,其功耗特性和功率特性同样重要.首先介绍IGBT器件基本的结构特点和工作原理,并对IGBT器件的尾流特性及其功耗组成进行分析和概述.同时结合IGBT的热阻模型,确定温度公式与功耗的关系,在保证其他电学参数相同的情况下,通过使用专门软件对实际情况下IGBT器件的功耗进行模拟仿真,分别在外界环境温度为-55℃、25℃、125℃的条件下研究外界环境温度对于IGBT功耗特性的影响,并通过控制IGBT器件外壳基板的热阻来降低IGBT器件的功耗.%IGBT is a power device with the virtue of MOSFET and GTR, which is widely used as a common device in Power Electronic Circuit. In research of IGBT device, the feature of dissipation is as important as power. First of all, this paper introduces the basic structure of IGBT device and how the IGBT device works. Then this paper analyzes and generalizes the tail current characteristic and the composition of IGBT dissipation. Combined with thermal resistance model of IGBT, the relation between temperature formula and power dissipation is determined, and under the situation when other electrical parameters are all the same, by using the specialized software, the simulation of the dissipation of IGBT device is made under the condition in which the environment temperature are -55℃, 25℃ and 125℃ to study how temperature influences the dissipation of IGBT device and reduce IGBT dissipation by controlling the thermo resistor of the shell baseboard of IGBT device.