采用液态磷源扩散法，通过控制扩散工艺条件制备具有不同方块电阻的多晶体硅片，并采用丝网印刷烧结技术制备晶体硅太阳能电池片，研究方块电阻、正面细栅线电极宽度、主栅类型以及烧结工艺对晶硅太阳能电池的光电转换性能的影响。结果表明，在方块电阻为80Ω/□，栅线宽度为60μm条件下，采用三主栅时，多晶硅太阳能电池片的短路电流、开路电压及填充因子均较高，光电转换效率最优，达到16.931%。通过优化烧结工艺，选择峰值烧结温度为800℃，带速为660 cm/min以及升温速率为65.7℃/s，细栅线电极的致密度高，光电转换效率达到17.207%。%Multicrystalline silicons with different sheet resistance were prepared using liquid phosphorus source diffusion method and controlling the process conditions. Crystalline silicon solar cells were made by screen printing and firing technology. The effects of sheet resistance, front side electrode gridline width, busbar design types and firing profiles on the photoelectric conversion performance parameters were investigated. The results show that, when the square sheet resistance is 80Ω/□and the gridline design width is 60μm under the condition of three busbars, the higher short circuit current, open circuit voltage and fill factors of crystalline silicon solar cells can be obtained, and the photoelectric conversion efficiency is the best reaching up to 16.931%. By optimizing the firing profiles, the density of fine gridline electrode is the high and the photoelectric conversion efficiency can be improved to 17.207% when the peak firing temperature is 800℃, the belt speed is 660 cm/min and heating rate is 65.7℃/s.
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