利用乙二胺( Ethylenediamine anhydrous,EDA)/异丙醇(Isopropyl alcohol,IPA)体系对单晶硅(100)面进行了各向异性腐蚀,研究了不同温度、不同反应时间条件下单晶硅表面的绒面结构和表面反射率.利用EDA/IPA 体系得到的金字塔结构尺寸为8μμm左右,但均匀性较差.在1.5% EDA、5% IPA体系中添加5%Na2SiO3,80℃反应15min后获得了平均反射率为l1%、表面金字塔结构均匀且尺寸较小的单晶硅绒面.实验结果表明,Na2SiO3的引入使金字塔的尺寸从8μm左右降低至3μm左右,并且均匀度也得到改善.%The texture monocrystalline silicon was prepared with ethylenediamine anhydrous(EDA)/isopropyl alcohol(IPA) as escharotics. The dependence of the surface reflectance and topography on different parameters (concentration, reaction time, temperature) was researched. The result demonstrated that using EDA/IPA solution obtain small size. The surface texturization is optimized in condition of 1. 5% EDA, 5% 1PA, etching 15min at 80℃, with 5% Na2SiO3 as additive. Under this optimized condition, the surface is led to an average reflectance of 11%. As a result, a small amount of NazSO3 added in EDA/IPA solution helps to reduce the pyramidal size from 8μm to 3μm approximately and obtain more uniform surface.
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