一维ZnO纳米结构掺杂的研究进展

摘要

One-dimensional ZnO nanostructures have been extensively studied and applied in diverse fields,due to their wide bandgap semiconductor property,piezoelectricity,large exciton binding energy,anisotropism and low dimensional nanostructure characteristics.Many routes can be adopted to grow diverse morphological one-dimensional ZnO nanostructures which have been used in different fields such as nanogenerators,solar cells,photoelectrochemical water splitting,light emitting diodes,lasers,gas sensitive devices,spin electronics,etc.However,there are many shortcomings in one-dimensional intrinsic ZnO nanostructures,which limit their applications.In recent years,the one-dimensional doped ZnO nanostructures have drawn great attention since doping can enhance or give them some novel and peculiar characteristics.This article gives a comprehensive overview of the progress of one-dimensional doped ZnO nanostructures that has been made within the context of doping types,including n-doping,p-doping,diluted magnetic semiconductor doping,etc.Furthermore,the problems for the doping of one-dimensional ZnO nanostructures have been discussed,and the prospect of further research and development have been proposed.%一维ZnO纳米结构,具有宽带隙半导体性、压电性、室温下大激子束缚能、各向异性、低维结构等特性,故被广泛深入地研究应用于诸多领域.采用各种途径生长的形貌丰富的一维ZnO纳米结构,被广泛应用于纳米发电机、太阳能电池、光电化学分解水、发光二极管、激光器、气体敏感器件、自旋电子器件等领域.然而,本征一维ZnO纳米结构还存在很多缺点,限制其应用范围.通过掺杂可以增强或赋予其某些特殊功能,近年来一维ZnO纳米结构掺杂引起研究者的极大关注.从掺杂类型的角度出发,综述了近年来国内外一维ZnO纳米结构掺杂方面的研究进展,包括n型、p型、稀磁半导体以及其它掺杂,讨论了一维ZnO纳米结构掺杂存在的主要问题,并对进一步研究与开发提出展望.