光学相干层析成像用于微机电系统测量研究

摘要

为了对硅V型槽的结构进行测量，采用热光源谱域光学相干层析成像法，进行了理论分析和实验验证，取得了硅V型槽的1维深度和2维层析图像，获得了硅V型槽的深度、上部宽度和底部宽度数据分别为145.38μm，212μm和32μm。结果表明，该测量结果与扫描电子显微镜测量值基本一致。这对微机电系统结构测量是有帮助的。%In order to measure the structure of V-shaped silicon grooves , a thermal light spectral-domain optical coherence tomography was introduced .After the theoretical analysis and the experimental verification , 1-D depth image and 2-D cross-sectional image of V-shaped silicon grooves were obtained .Depth of 145.38μm , top width of 212μm and bottom width of 32μm were gotten.The measured data was the same as the measured result of scanning electron microscope .The results are helpful for the measurement of micro-electromechanical system .