a－SiNx：H 薄膜的热丝化学气相沉积及微结构研究

摘要

In order to study the effect of hot wire temperature on the properties of a-SiNx:H thin films, by using hot wire chemical vapor deposition method and using SiH 4 , NH3 , H2 as reaction gas source , a-SiNx:H films were deposited by changing the temperature of hot wire .Film luminescent properties , microstructure and bonding characteristics were gotten and analyzed in detail by means of measurement methods such as ultraviolet-visible optical absorption spectroscopy , Fourier transform infrared transmission spectroscopy , and photoluminescence spectrum .The results show that , when wire temperature is at 1645℃, H content reaches greatest , N content is extremely small , film has high refractive index and a large degree of order .When the wire temperature is at 1713℃, H content decreases , N content reaches extremes .And then, with the increase of hot wire temperature, N content decreases and internal defect intensity increases .The results show that the best value of hot filament temperature is between 1596℃ to 1680℃ and the refractive index of film is 2.0.The film, with full nitrogen and hydrogen contents and stable structure and characteristics , is suit to choose as silicon-based solar cell antireflection film .%为了研究热丝温度对a－SiNx：H薄膜性能的影响，采用热丝化学气相沉积法，以SiH4，NH3，H2为反应气源，改变热丝温度沉积薄膜。通过紫外－可见光吸收谱、傅里叶红外透射光谱、光致发光光谱等测试手段对薄膜发光特性、微观结构及键合情况进行表征与分析。从测试情况可知，当热丝温度为1645℃时，H含量最大，N含量最小，同时其折射率最高，薄膜材料的有序度增大；当热丝温度为1713℃时，H含量减少，N含量达到最大，且随着热丝温度增大，薄膜中N含量又开始下降，内部缺陷态密度增加。结果表明，热丝法制备a－SiNx ：H薄膜的热丝温度最佳值在1596℃～1680℃之间，此时所制备的薄膜折射率为2．0，适合应用于硅基太阳能电池减反射膜层，且具有较充分的氮、氢含量，薄膜结构、性能稳定。