研究了低能电子束辐照对AlGaInP基红光LED性能的影响,利用不同剂量的电子束对AlGaInP基红光LED进行辐照,将辐照后和未辐照的LED的发光强度进行对比.结果表明:辐照后LED的发光强度增加,同一外延片上测试点的发光强度的增加不均匀.%The influence of low energy electron beam irradiation on optical property of AlGalnP-based red LED was studied. This experimental used the electron beams which have different doses to irradiate the AlGalnP-based red LED, and compared the luminous intensity of these LED which irradiated and un -irradiated. The results showed that the luminous intensity of LED which irradiated were improved, the luminous intensity of the test points on the same epitaxial wafer was not uniform.
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