AlGaInP LED Fabrication Method of AlGaInP related LED

摘要

PURPOSE: A method for fabricating an AlGaInP type LED(Light Emitting Diode) is provided to improve characteristics of an AlGaInP type LED and reduce a fabricating cost of the AlGaInP type LED by changing a structure of the AlGaInP type LED. CONSTITUTION: An LED wafer is formed by depositing sequentially an n-type etch stop layer(31), an n-type AlGaInP clad layer, an AlGaInP or a GaInP active layer and a barrier, a p-AlGaInP clad layer, and a p-contact layer on an n-type GaAs substrate. An etch process for the LED wafer is performed. A p-metal is deposited on a p-contact layer. An n-metal is deposited on the n-type AlGaInP clad layer. An insulating layer(41) is grown on a conductive silicon substrate(40). A p-metal, an n-metal(43), and a metal bump(44) are formed thereon. A metal side of the LED wafer is adhered to the silicon substrate(41). The n-type GaAs substrate is removed by using a dry etch method or a wet etch method.