Simple and cost effective process for preparation of a radiation emitting semiconductor chip based on AlGaInP useful in production of light emitting diodes (LED)

摘要

Preparation of a radiation emitting semiconductor chip based on AlGaInP by the steps: preparation of substrate (12), application of a semiconductor on the substrate, which contains a photon emitting active layer (22), and application of a transparent decoupling layer (16) which includes compounds of given formula containing Ga, In, Al, and P, where substrate (12) is formed from germanium and layer (16) is applied at a maximum temperature of 800 [deg] C. An independent claim is included for the above radiation emitting semiconductor as described.