选用35 MeV Si离子,针对 NPN及 PNP型双极晶体管(BJT)进行辐照实验,探究重离子辐照条件下双极晶体管辐射损伤及缺陷在不同发射结偏置条件下的影响规律.通过原位测试不同偏置条件的双极晶体管电流增益等参数随辐照注量的变化关系,研究了发射结偏置条件对双极晶体管辐射损伤的影响.此外,采用深能级瞬态谱(DLTS)针对辐照后的双极晶体管进行了测试,得到了双极晶体管内的辐射缺陷信息.基于电性能测试和 DLTS分析结果可以看出,双极晶体管辐照时所施加的偏置条件能够明显地影响器件的电性能参数和器件内的深能级缺陷浓度,不同类型的缺陷对于电性能的影响也存在明显差异.%35 MeV Si ion is adopted as the irradiation source to research the displacement radiation damage and defects on NPN and PNP Bipolar Junction Transistors(BJTs) under various bias cases. The changing of electrical parameters of BJTs is in situ measured with increasing irradiation fluence of 35 MeV Si ions. By using Deep Level Transient Spectroscopy(DLTS),deep level defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra,it is clearly that the bias conditions could affect the concentration of deep level defects,and the radiation damage induced by heavy ions. Different types of defects give different contributions to the electrical performance degradation. The vacancy related defects(U2(-/0) and U2(+/0)) can give more obvious contributions to the current gain degradation than other defects.
展开▼
