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硅圆片表面活化工艺参数优化研究

         

摘要

利用正交实验,对单晶硅表面活化工艺中重要参数对活化效果的影响进行了研究,并优化了工艺.实验针对RCA活化溶液处理工艺的特点,选择溶液配比、处理时间和温度3个重要因素为研究对象,以30%盐水为测试液,以接触角为指标,评估了这3个因素对活化效果的影响规律.对实验结果的分析表明,在此三因素中,活化温度与活化效果的关系最密切,活化液配比和活化时间的影响依次减弱.根据实验分析的结果,得到优化的工艺.利用此优化工艺进行了硅圆片键合实验,其结果表明此工艺能够实现无明显界面缺陷的直接健合.%The effects of important process parameters in surface activation of monocrystal silicon wafer were investigated by orthogonal experiments and the activation process was optimized. The three parameters, volume ratio of activation solution,processing time and temperature,were selected as investigation objects. Based on the characters of surface activation process.the influences on surface activation of these parameters were estimated by the means of contact angle measurement experiments and 30% salt Water was the testing solution. The exper imental resulls were analyzed which showed that among the three parameters,activation temperature had the most intimate relationship with surface activation result. And the volume ratio of activation solution had more obvious effect than processing time. This optimized process was used in silicon direct bonding and the results of bonding experiment indicaled the void-free bonding could be realized by this process.

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