Effects of wet activation process parameters on surface hydrophilicity in silicon direct wafer bonding

摘要

Wet activation is a very important step in silicon direct wafer bonding process and a optimized activation process is desirable to improve the surface hydrophilicity. Therefore the pivotal parameters of activation process were investigated which were volume ratio, holding time and treat temperature. A orthogonal experiment array was designed to reveal the effects of these parameters and the experiment results were analyzed by range analysis method. The analysis results indicted among those three parameters, everyone had intimidate relationship with surface hydrophilicity, which was indexed by contact angle. And higher concentration, longer holding time and higher treating temperature in possible value range were more desirable. Based on these conclusions, optimized activation process was desigened using which void-free bonding was realized.