多晶硅薄膜的氢等离子体钝化机理研究

摘要

The mechanism of hydrogen plasma passivation for poly-Si thin films has been investigated.It has been found that different kind of hydrogen plasma radical was responsible for different defects passivation for poly-Si. The Hαwith low energy was mainly responsible for passivating the dangling-bond defects.The H* with higher energy may passivate the defects related to Ni impurity around the grain boundaries more effectively.In addi-tion,the Hβand Hγwith the highest energy are required to passivate intra-grain defects.These analysis and re-sults are very usable to optimize the H plasma passivation and make the passivation more effective.%研究了氢等离子体钝化多晶硅(poly-Si)薄膜中缺陷态的详细物理机制。结果表明，多晶硅中不同的缺陷态需要不同的氢等离子体基团予以钝化。 Hα具有较低的能量，主要钝化悬挂键类缺陷态；H*具有较高的能量，对钝化晶界附近与镍杂质相关的缺陷态更有效；Hβ和 Hγ具有的能量最高，可以用来钝化晶粒内部的缺陷态。这些分析和结果有利于优化 H等离子体钝化多晶硅的条件，进一步提高多晶硅性能。