氢等离子体辅助固相晶化多晶硅薄膜的初步研究

摘要

In this paper,a novel technology of hydrogen plasma assisted solid phase crystallization polysilicon was proposed.This crystallization technology can not only reduce the crystallization time but also passivate de-fects in the poly-Si thin films effectively.We compared the H-SPC with traditional SPC firstly,and then,inves-tigated the influence of process conditions on the quality of the resultant polysilicon.In addition,we studied the physical mechanism of this crystallization technology.%提出一种氢等离子辅助固相晶化(hydrogen plasma assisted solid phase crystallization,H-SPC)多晶硅的新颖技术。这一晶化技术能够明显缩短晶化时间,同时有效钝化多晶硅薄膜的缺陷态。首先对氢等离子辅助 SPC 技术与传统 SPC 技术进行比较分析,进而研究了晶化过程中各种工艺条件对多晶硅晶化质量的影响并进行了物理机制的初步分析。