发射极指分段与非均匀指间距组合的SiGe HBT设计及热分析

摘要

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter and non-uniform finger spacing structure is proposed to improve thermal stability of HBT. Thermal simulation for a ten-finger power SiGe HBT with novel structure are conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers is obtained. Compared with traditional integrity structure or segmented emitter and uniform finger spacing structure, the maximum junction temperature, temperature distribution and heat-flux distribution are significantly improved. Thermal stability is effectively enhanced.%为了增强多发射极指SiGe HBT的热稳定性,提出了发射极指分段与非均匀指间距组合的新型器件结构.使用有限元方法对新型结构的SiGe HBT进行热分析,得到了发射极指上的三维温度分布.结果表明,与传统的完整结构及发射极指分段和均匀指间距组合的结构相比,新型结构明显降低了最高结温,温度分布更加均匀,使有源区整体热流分布更加均匀合理,有效地提高了器件的热稳定性.