采用PECVD技术在BK7玻璃基底上沉积了不同厚度的单层SiO2（折射率为1．46）和SiNx （折射率为1．84）光学薄膜，并对这2种膜层进行抗激光损伤阈值（LIDT ）测试，分析讨论了PECVD技术制备的单层光学薄膜与抗激光损伤特性之间的关系。实验结果表明：PECVD技术制备的单层SiO2薄膜有较高的LIDT ，薄膜光学厚度在λo／4～λo／2之间时，在光学厚度为350 nm时，LIDT有最小值21．7 J／cm2，光学厚度为433 nm时，LIDT有最大值27．9 J／cm2。SiNx 薄膜的L ID T随着光学厚度增加而减小，在光学厚度为λo／4时，L ID T 有最大值29．3 J／cm2，光学厚度为λo／2时，L ID T有最小值4．9 J／cm2。%Monolayer SiO2 optical thin films(refractive is 1 .46) and SiNx optical thin films(re‐fractive is 1 .84) with different thicknesses were prepared by the plasma enhanced chemical va‐por deposition (PECVD) technology on BK7 substrates ,their laser‐induced damage thresholds (LIDT) were measured ,and the relationship between the monolayer optical thin film and its la‐ser‐induced damage properties was analyzed .The results indicate that monolayer SiO2 thin films prepared by PECVD technology have high LIDT ,when the optical thickness of films is betweenλo/4 andλo/2 ,LIDT has the maximum 27 .9 J/cm2 when the optical thickness is 433 nm , LIDT has the minimum 21 .7 J/cm2 when the optical thickness is 350 nm .The LIDT of monolayer SiNx thin films decrease with the increase OF optical thickness ,LIDT has the maximum 29 .3 J/cm2 when the optical thickness is λo/4 ,LIDT has the minimum 4 .9 J/cm2 when the optical thickness is λo/2 .
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