表面处理对碳化硅直接键合的影响研究

摘要

SiC的直接键合对于许多应用于高温环境的MEMS微器件有着非常重要的应用价值,但是晶片的表面处理是影响SiC直接键合的关键因素.设计中采用改进后的湿法清洗方法和等离子体处理对晶片表面进行处理;从而得到满足直接键合的洁净度和粗糙度.最后利用热压法实现了SiC的直接键合,并且估计其键合能为14.47 MPa.%To many MEMS devices in high temperature environment,SiC direct bonding has very significant application val-ue,however,the surface treatment of SiC wafer becomes a key of direct bonding.In the design,the improved wet cleaning method and a plasma treatment were used to treat the wafer surface,thus the wafer that meets cleanliness and roughness to direct bonding was obtained.Finally,hot embossing technology was used successfully to achieve SiC direct bonding and obtain the ideal bonding strength and its bonding is about 14.47 MPa.