基于CVD法制备的单层二硫化钼的光电晶体管特性研究

摘要

二硫化钼(MoS2)优异的理化性能在光电晶体管领域的应用具有极大潜力.文中研究了化学气相沉积法(CVD)法生长的MoS2薄膜制备的光电晶体管的性能.随着光照强度的增加,光电流也随之增加,但幅度逐渐下降,由于其价带上的电子极易吸收能量跃迁到导带从而产生光电流,但最终会达到响应饱和状态.对基于二硫化钼光电晶体管性能的研究有助于二硫化钼材料在光电传感器上的应用.%The excellent physical and chemical properties of molybdenum disulphide(MoS2) have great potential in the ap-plication of optoelectronic transistor.The property of monolayer MoS2phototransistors based on CVD method was studied.The cur-rent in the phototransistors was increased with the increasing of light intensity,but the rate of increase was reduced.As the elec-tron from the valence belt is easy to absorb energy to move to the conduction band,the light current can be generated,and eventu-ally the response saturation state was achieved.The understanding of the phototransistor can help to application of molybdenum di-sulphide material on photoelectric sensor.