InAs/GaSb应变超晶格红外调制光谱研究

摘要

When the step scanning Fourier Transform Infrared (FTIR) modulation Photoluminescence Spectroscopy (PL) is used for measurement, the background disturbance is eliminated by combining the superiority of FTIR with the advantages such as non-destruction, high sensitivity and convenient of PL, so as to enhance signal intensity. The influences of background noise, impurity level and temperature on the emission intensity and location in InAs/GaSb strain superlattice material are studied. By changing the measurement parameters, different measurement methods are summarized. The research results are of referential value to the epitaxy of InAs/GaSb strain superlattice materials and the subsequent processing of them.%在用步进扫描傅里叶变换红外 (Fourier Transform Infrared, FTIR) 调制光致发光 (Photoluminescence, PL) 光谱仪进行测试时, 基于FTIR的优势, 并结合PL无损、灵敏度高、简单的优点, 通过减弱背景干扰来提高信号强度.研究了背景噪声、杂质能级和温度对InAs/GaSb应变超晶格材料的发射峰强度及位置的影响, 并通过改变测试参数, 总结出了针对不同材料的测试方法.这项研究结果对InAs/GaSb应变超晶格材料的外延生长及后续加工具有参考价值.