半导体器件多物理场计算中的热边界条件

摘要

基于半导体器件的物理模型，联立并求解由电磁场、半导体物理及热力学方程构成的多物理场方程组，实现半导体器件及电路的电磁效应计算。为了更加准确地仿真半导体器件的温度变化，深入研究了多物理场计算中的热边界条件。以肖特基二极管 HSMS-282c 为例，采用多物理场算法仿真并对比了器件在相同激励(幅值为2 V 的阶跃脉冲)、不同边界条件下的温度变化情况。实际测量了器件在正向偏置下的表面温度，并于多物理场计算结果进行对比。结果表明，采用热对流边界可以准确仿真半导体器件的热效应。%The multiphysics algorithm in this paper is based on semiconductors’physical model to realize the simulation of electromagnetic effects on semiconductor devices and circuits.The model is constituted of a set of partial differential equations, including electromagnetic equations,semiconductor physics and thermal equations.For accurately simulating temperature distri-butions in semiconductor devices,the thermal boundary conditions are researched in this paper.A commercial Schottky diode with model number HSMS-282c is excited by a 2 V step pulse generator.Its temperature variation under different thermal bound-ary conditions are compared.The diode’s surface temperature under different forward voltage is also measured and compared with the simulation result.The results show that the temperature of semiconductor devices can be accurately simulated by the mul-tiphysics algorithm with convection boundary condition.