薄膜厚度对Al掺杂ZnO薄膜性能的影响

摘要

The ZnO：Al（ZAO） films with different thickness were deposited on glass substrates using a DC reactive magnetron sputtering system and the thickness dependence of structural,electrical and optical properties of the ZAO films were studied in detail.The ZAO thin film was prepared by using the optimum parameter,and it can be acquired that the film thickness was about 500 nm,the resistivity was 1.68×10-3 Ω·cm and the transmissivity in visible region was about 90.3%.%采用直流磁控溅射技术,以氧化锌铝陶瓷靶为靶材,在玻璃衬底上制备了ZnO：Al（ZAO）薄膜样品。在其他参数不变的情况下,由不同溅射时间得到了不同厚度的薄膜,研究了薄膜的结构性质、电学和光学性质随薄膜厚度的变化关系。实验结果表明：在薄膜厚度为500 nm时,ZAO薄膜具有最优化的光电性能,电阻率为1.68×10-3Ω.cm,可见光区平均透射率为90.3%。