PEM/OBIRCH用于集成电路漏电流失效定位

摘要

Leakage current increase is a main failure pattern for integrated circuit ( IC ) . By combining photon emission microscopy (PEM) with optical beam induced current change ( OBIRCH) complementarily, PN junction leakage, isolation reduction of dielectric layer, consequential leakage current failure and backside analysis cases were studied, and localization techniques were analyzed in these electrical overstress, metal bridge and ESD failures. It can be concluded that the shape and location of a photon emission spot can be used to judge whether the failure is induced by an original leakage current or a consequential one. The result combined with circuit analysis can explain the cause of photon emission. OBIRCH can work as a more precise localization method for original defect, and backside OBIRCH analysis has an advantage in multilayer structure.%漏电流增大是集成电路的主要失效表现,通过光发射显微镜( PEM)和光束感生电阻变化( OBIRCH)技术互补地结合使用,对集成电路中常见的PN结漏电、介质层绝缘性降低、间接漏电流失效和芯片的背面分析案例进行研究,分析由过电应力、金属化桥连、静电放电损伤导致漏电的定位特性. 得出以下结论:根据光发射显微镜得到的缺陷形貌和位置可以断定是否为原始失效或间接失效,结合电路分析进而可以解释发光的原因;OBIRCH对原始缺陷的定位更为准确,多层结构的背面OBIRCH分析更有优势.