SiC电力电子器件的发展及其应用概述

摘要

宽禁带半导体材料由于其具有更大的击穿电场而成为下一代电力电子器件的焦点，其中以SiC材料和器件的发展尤为突出。本文从开关损耗的角度对四种SiC电力电子器件——JBS（结型势垒肖特基二极管）、JFET（结型场效应晶体管）、BJT（双极型晶体管）和MOSFET（金属-氧化物-半导体场效应晶体管）的发展及其应用作了概述。%Wide bandgap semiconductors become the focus for the next generation of power electronic devices, due to their large breakdown electric field. Between them, the developments of the material and device of SiC are extremely outstanding. In this paper, from the application point-of-view, the developments and applications of four SiC power electronic devices: JBS, JFET, BJT and MOSFET are simply reviewed.