苯基单分子器件I-V特性的研究

摘要

The experiments and theory have demonstrated that a single molecule can form the core of a two-terminal device so far. The simulations of I-V characteristics of three-terminal device based on the single benzene molecule by tight-binding method have described, and the influence of temperature on the current is discussed. The result sheds new light on the I-V properties of molecular devices and shows that such calculations would be useful in molecular devices designing for future nanotechnology.%采用紧束缚近似的方法,研究了由单苯基分子构成的三端器件的I-V特性.所得结果近似表现出了MOS(Metal-Oxide-Semiconductor)器件的电学规律;同时模拟并讨论了该器件的I-V特性随温度变化的规律,发现:电流幅值随门电压的增大而增加,温度对电流幅值有重要影响.所得结论为分子器件和纳米器件的开发,提供了理论基础.