一种分段曲率补偿带隙基准源设计

摘要

在传统带隙基准的基础上，设计了一种分段曲率补偿的低温漂带隙基准。利用NMOS管工作在亚阈值区域时漏电流和栅极电压的指数特性，在低温和高温段同时对基准电压进行曲率补偿，采用UMC 0.25μm BCD工艺进行仿真。仿真结果表明，电源电压5 V时，静态功耗电流为7.11μA；电源电压2.5~5.5 V，基准电压变化148μV；温度在–40~＋145℃内，电路的温度系数为1.18×10–6/℃；低频时电源抑制比为–87 dB。%A new bandgap reference voltage with low temperature drift and piecewise curvature compensation was designed, which was based on the traditional bandgap reference construct. It used the exponential response curve between leakage current and grid voltage when the N type MOS-FET was working in the sub-threshold region to compensate the temperature characteristic curve at the high and low temperatures. Simulation was conducted by using UMC 0.25μm BCD process. Simulation result shows that the quiescent current is 7.11μAwhen power supply is 5 V. The change amplitude of reference voltage is 148μV when the power supply is from 2.5 V to 5.5 V. The temperature coefficient is 1.18×10–6/℃ from –40℃ to 145℃. The PSRR is –87 dB.