有源层表面性质对晶硅电池暗I-V特性的影响

摘要

利用有限差分法求解半导体器件基本方程，研究了表面悬键、杂质和缺陷对晶硅电池输出参数的影响。研究表明：当晶硅电池无体内缺陷和表面缺陷或当仅存在表面悬键、杂质和缺陷，且三者起施主型和受主型陷阱作用时，正向偏压下的晶硅电池暗I-V特性曲线与理想二极管I-V特性曲线相同，但当正向偏压大于PN开启电压0.59 V，晶硅电池暗I-V特性曲线将偏离理想二极管I-V特性曲线，且偏离程度随表面悬键、杂质和缺陷浓度的增加而增大；当表面悬键、杂质和缺陷起复合中心作用时，晶硅电池暗I-V特性曲线将偏离理想二极管I-V特性曲线；就对暗I-V特性曲线的影响而言，复合中心最大，施主型次之，受主型最小。%The influences of surface dangling bonds, impurities and defects on the output parameters of crystalline silicon solar cellwere discussed by solving semiconductor device equations by finite difference method. The results show that the darkI-Vcharacteristic curves of the crystal silicon cell without bulk defects and surface defects or only with donor-like or acceptor-like surface dangling bonds, impurities and defects, are the same as thoseofthe ideal diodes under theforward bias voltage conditions.When the forward bias voltage is greater than 0.59V, which is the turn-on voltage of PN junction, these darkI-Vcharacteristic curves deviate from those ideal diodeI-Vcharacteristic curves, and the degree of deviationincreaseswith the increase of the concentrations of the surface dangling bonds, impurities and defects.When the functions of surface dangling bonds, impurities and defects are as the recombination centers, the darkI-Vcharacteristic curves of crystalline silicon cells deviate from the ideal diodeI-Vcharacteristic curves; the influences on the darkI-V characteristic curves decreases in order of the recombination-center-like, donor-like and acceptor-like.