Effect of asymmetrical electrode and texture structure on the dark I-V characteristics of crystalline silicon cell

摘要

? 2016, Chinese Ceramic Society. All right reserved. ? 2016, Chinese Ceramic Society. All right reserved. The influences of asymmetrical electrode and texture structure on the dark I-V characteristics of crystalline silicon solar cell were analyzed by solving the basic equations of semiconductor device with finite difference method and changing the substrate doping concentration. The results show that the substrate doping concentration determines the properties of pn junction in crystalline silicon solar cells with texture structure and has important influences on their dark I-V characteristics curves. when the ratio of grid area to pyramid area is same, the sub-region properties of dark I-V characteristics curves will be same and the ideal increases as the number of pyramid period increasing, the ideal factor of the diode between grid electrode and bottom electrode, which increases as the number of pyramid period increasing are the key factor for determining the properties of these dark I-V characteristics curves. When the substrate doping concentration is greater than or equal to 1×10 17 , their dark I-V characteristic curves can be divided into three change regions. When the substrate doping concentration is less than 1×10 17 , their dark I-V characteristic curves can be divided into four change regions. Under the same bias voltage, the higher the substrate doping concentration, the smaller the dark current. In addition, the physical mechanisms related with different regions are analyzed in detail by the total current density distributions of p-n junctions under different bias voltage. The influences of asymmetrical electrode and texture structure on the dark I-V characteristics of crystalline silicon solar cell were analyzed by solving the basic equations of semiconductor device with finite difference method and changing the substrate doping concentration. The results show that the substrate doping concentration determines the properties of pn junction in crystalline silicon solar cells with texture structure and has important influences on their dark I-V characteristics curves. when the ratio of grid area to pyramid area is same, the sub-region properties of dark I-V characteristics curves will be same and the ideal increases as the number of pyramid period increasing, the ideal factor of the diode between grid electrode and bottom electrode, which increases as the number of pyramid period increasing are the key factor for determining the properties of these dark I-V characteristics curves. When the substrate doping concentration is greater than or equal to 1×10 17 17 , their dark I-V characteristic curves can be divided into three change regions. When the substrate doping concentration is less than 1×10 17 17 , their dark I-V characteristic curves can be divided into four change regions. Under the same bias voltage, the higher the substrate doping concentration, the smaller the dark current. In addition, the physical mechanisms related with different regions are analyzed in detail by the total current density distributions of p-n junctions under different bias voltage.