The molecular dynamics simulation is applied to investigate the influence of the incident ion energy and incident angular distribution upon ion-assisted deposition process. The Cu-Cu and Ar-Cu interactions are modeled using the many body tight-binding potential and the Moliere potential, respectively, and the interface width is used to characterize the surface roughness properties at both transient and final state conditions. The results show that the surface roughness of the deposition film is lower when more Ar-to-Cu ratio is used at the same incident energy and angle. For the relative low or high incident energy, the film morphologies are not sensitive to the incident angle. However, if the incident energy of the argon ions is too high, the film morphology will be worse than that without using the ion-assisted deposition.
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机译:直接和大涡模拟在过渡和湍流中的应用(L'application de la simulation Directe et de la simulation des Gros Tourbillons a la Transition et a la Turbulence)(流动力学会议论文集在Chania,Cret举行)