State Key Laboratory of ASIC and System;
School of Microelectronics;
Fudan University;
Shanghai 200433;
China;
College of Biological;
Chemical Science and Engineering;
Jiaxing University;
Jiaxing 314001;
China;
Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center;
Institute of Fine Chemicals;
School of Chemistry&Molecular Engineering;
East China University of Science and Technology;
Shanghai 200237;
China;
State Key Laboratory of Surface Physics and Department of Physics;
Fudan University;
Shanghai 200433;
China;
Edge contact; 2D materials; Field-effect transistors; Schottky barrier; Contact resistance;