用MOVPE方法外延生长Si掺杂的立方相GaN

摘要

用MOVPE方法采取一种两步生长过程生长了未掺杂和Si掺杂的GaN.在生长了一个20nm厚的缓冲层后,外延生长了1μm厚的立方GaN外延层.利用二次离子质谱测定了掺杂的程度.并用X射线衍射和光致发光测量来表征了未掺杂和Si掺杂GaN的结构和光学质量.%Si-doped and undoped cubic GaN were grown by low-pressure metalorganic vapor phase epitaxy using a two-step growth process. After the deposition of a 20nm-thick buffer layer, an about 1μm-thick Si-doped cubic GaN epitaxial layer was deposited. Doping level was determined by secondary ion mass spectroscopy measurements. X-ray diffraction and photoluminescence measurements were used to characterize the structural and optical quality of the undoped and the Si-doped cubic GaN.