MFS结构钛酸铋铁电薄膜掺铌改性研究

摘要

基于MFS结构铁电存储器的需要,采用溶胶-凝胶工艺,在p-Si衬底上制备了对Bi4Ti3O12进行B位Ti元素铌元素取代的铁电薄膜,并电镀上银电极构成MFS结构.研究了掺杂浓度对薄膜的微观结构及铁电性能的影响.研究表明,650℃进行退火的BTN薄膜生长形态良好；2％掺杂取代的薄膜铁电性能最佳,剩余极化强度Pr可达到19.01μC/cm2,矫顽场为200 kV/cm.%To fulfill the need of ferroelectric storage with MFS structure, Bi4Ti3O12 films was prepared on p-Si substrate, whose B site Ti element was replaced by Nb element. The Ag electrode was then grown on the surface of the films using electroplating method to form the MFS structure. We researched on the effects of the amount of Nb to the structures and the ferroelectric properties of the films. The Researches show that with the 650 ℃ anneal temperature and the 2% replaced Ti by Nb, the BTN films get the best crystal structure and the best ferroelectric properties with Pr=19.01 Μc/cm2 and Ec = 200 Kv/cm.