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Yttrium-doped bismuth titanate thin film and preparation thereof
Yttrium-doped bismuth titanate thin film and preparation thereof
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机译：掺钇钛酸铋薄膜及其制备
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摘要
A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device:Bi4-xYxTi3O12 (I)wherein x is an integer of 0.1 to 2.
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机译：具有式（I）组成的钛酸铋钇（BYT）膜具有增强的残留极化和电疲劳特性，并具有优异的铁电性能，因此可以有利地用于包括FRAM器件的电气或电子器件中：<？in-line-formulae description =“在线公式” end =“ lead”？> Bi 4-x Y x Ti 3 O 12 （I）<？in-line-formulae description =“在线表达式” end =“ tail”？>其中x是0.1至2的整数。
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